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Creators/Authors contains: "Chen, J W"

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  1. ; ; ; ; ; ; ; ; ; ; et al (, Reviews of Modern Physics)
    Free, publicly-accessible full text available September 1, 2026
  2. ; ; ; ; ; ; ; ; ; ; et al (, Science Advances)
    Strain-sensitive Ba x Sr 1− x TiO 3 perovskite systems are widely used because of their superior nonlinear dielectric behaviors. In this research, new heterostructures including paraelectric Ba 0.5 Sr 0.5 TiO 3 (BSTO) and ferroelectric BaTiO 3 (BTO) materials were epitaxially fabricated on flexible muscovite substrate. Through simple bending, the application of mechanical force can regulate the dielectric constant of BSTO from −77 to 36% and the channel current of BTO-based ferroelectric field effect transistor by two orders. The detailed mechanism was studied through the exploration of phase transition and determination of band structure. In addition, the phase-field simulations were implemented to provide theoretical support. This research opens a new avenue for mechanically controllable components based on high-quality oxide heteroepitaxy. 
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